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1. Pattern evolution characterizes the mechanism and efficiency of CVD graphene growth

Author:
Geng, Dechao,   et al.   ; He, Wanzhen; Xu, Zhiping;     Show all 3 Authors
Source:
Carbon 2019 v.141 pp. 316-322
ISSN:
0008-6223
Subject:
graphene; mathematical models; synthesis
Abstract:
... Growing large-area, high-quality monolayers is the holy grail of graphene synthesis. In this work, the efficiency of graphene growth and the quality of their continuous films are explored through the time evolution of individual domains and their surface coverage on the substrate. Our phase-field modeling results and experimental characterization clearly demonstrate the critical roles of the depos ...
DOI:
10.1016/j.carbon.2018.09.046

2. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Author:
Geng, Dechao,   et al.   ; Wang, Huaping; Xue, Xudong; Jiang, Qianqing; Wang, Yanlei; Cai, Le; Wang, Liping; Xu, Zhiping; Yu, Gui;     Show all 9 Authors
Source:
Journal of the American Chemical Society 2019 v.141 no.28 pp. 11004-11008
ISSN:
1520-5126
Subject:
air; dielectrics; electronics; graphene; hydroxylation; silica; transistors; vapors
Abstract:
... Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation ...
DOI:
10.1021/jacs.9b05705

3. Facile growth of vertically-aligned graphene nanosheets via thermal CVD: The experimental and theoretical investigations

Author:
Geng, Dechao,   et al.   ; Wang, Huaping; Gao, Enlai; Liu, Peng; Zhou, Duanliang; Xue, Xudong; Wang, Liping; Jiang, Kaili; Xu, Zhiping; Yu, Gui;     Show all 10 Authors
Source:
Carbon 2017 v.121 pp. 1-9
ISSN:
0008-6223
Subject:
electric field; electrical conductivity; energy; graphene; nanosheets; vapors
Abstract:
... Owing to the distinctively morphological and structural features, vertically-aligned graphene nanosheets (VGs) possess many unique properties and hold great promise for applications in various fields. For controllable preparation and wide application of VGs, the establishing reliable growth method and profound understanding of the growth mechanism are of vital significance. Up to date, VGs are nor ...
DOI:
10.1016/j.carbon.2017.05.074

4. Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass

Author:
Geng, Dechao,   et al.   ; Chen, Jianyi; Zhao, Xiaoxu; Tan, Sherman J. R.; Xu, Hai; Wu, Bo; Liu, Bo; Fu, Deyi; Fu, Wei; Liu, Yanpeng; Liu, Wei; Tang, Wei; Li, Linjun; Zhou, Wu; Sum, Tze Chien; Loh, Kian Ping;     Show all 16 Authors
Source:
Journal of the American Chemical Society 2017 v.139 no.3 pp. 1073-1076
ISSN:
1520-5126
Subject:
ambient temperature; crystals; glass; vapors
Abstract:
... We report the fast growth of high-quality millimeter-size monolayer MoSe₂ crystals on molten glass using an ambient pressure CVD system. We found that the isotropic surface of molten glass suppresses nucleation events and greatly improves the growth of large crystalline domains. Triangular monolayer MoSe₂ crystals with sizes reaching ∼2.5 mm, and with a room-temperature carrier mobility up to ∼95 ...
DOI:
10.1021/jacs.6b12156

5. Fractal Etching of Graphene

Author:
Geng, Dechao,   et al.   ; Wu, Bin; Guo, Yunlong; Luo, Birong; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Liu, Yunqi;     Show all 8 Authors
Source:
Journal of the American Chemical Society 2013 v.135 no.17 pp. 6431-6434
ISSN:
1520-5126
Subject:
copper; graphene; models
Abstract:
... An anisotropic etching mode is commonly known for perfect crystalline materials, generally leading to simple Euclidean geometric patterns. This principle has also proved to apply to the etching of the thinnest crystalline material, graphene, resulting in hexagonal holes with zigzag edge structures. Here we demonstrate for the first time that the graphene etching mode can deviate significantly from ...
DOI:
10.1021/ja402224h

6. Uniform hexagonal graphene flakes and films grown on liquid copper surface

Author:
Geng, Dechao,   et al.   ; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi;     Show all 10 Authors
Source:
Proceedings of the National Academy of Sciences of the United States of America 2012 v.109 no.21 pp. 7992-7996
ISSN:
0027-8424
Subject:
copper; crystal structure; vapors
Abstract:
... Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm2), spatially ...
DOI:
10.1073/pnas.1200339109
PubMed:
22509001
PubMed Central:
PMC3361379

7. Low Temperature Growth of Highly Nitrogen-Doped Single Crystal Graphene Arrays by Chemical Vapor Deposition

Author:
Geng, Dechao,   et al.   ; Xue, Yunzhou; Wu, Bin; Jiang, Lang; Guo, Yunlong; Huang, Liping; Chen, Jianyi; Tan, Jiahui; Luo, Birong; Hu, Wenping; Yu, Gui; Liu, Yunqi;     Show all 12 Authors
Source:
Journal of the American Chemical Society 2012 v.134 no.27 pp. 11060-11063
ISSN:
1520-5126
Subject:
air; ammonia; copper; electrical properties; geometry; graphene; melamine; nitrogen; pyridines; temperature; vapors
Abstract:
... The ability to dope graphene is highly important for modulating electrical properties of graphene. However, the current route for the synthesis of N-doped graphene by chemical vapor deposition (CVD) method mainly involves high growth temperature using ammonia gas or solid reagent melamine as nitrogen sources, leading to graphene with low doping level, polycrystalline nature, high defect density an ...
DOI:
10.1021/ja302483t