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1. 2D Waveguided Bessel Beam Generated Using Integrated Metasurface-Based Plasmonic Axicon

Author:
Fan, Yulong; Cluzel, Benoît; Petit, Marlène; Le Roux, Xavier; Lupu, Anatole; de Lustrac, Andre
Source:
ACS applied materials & interfaces 2020 v.12 no.18 pp. 21114-21119
ISSN:
1944-8252
Subject:
silicon,   etc   ; engineering; image analysis;     Show all 3 Subjects
Abstract:
... Near-field imaging of the propagation of a diffraction-free Bessel-type beam in a guided wave configuration generated by means of a metasurface-based axicon lens integrated on a silicon waveguide is reported. The operation of the axicon lens with a footprint as small as 11 μm² is based on local engineering of the effective index of the silicon waveguide with plasmonic nanoresonators. This generic ...
DOI:
10.1021/acsami.0c03420

2. Reliable and Robust Fabrication Rules for Springtail-Inspired Superomniphobic Surfaces

Author:
Kang, Seong Min; Choi, Ji Seong; An, Joon Hyung
Source:
ACS applied materials & interfaces 2020 v.12 no.18 pp. 21120-21126
ISSN:
1944-8252
Subject:
silicon,   etc   ; durability; polymers;     Show all 3 Subjects
Abstract:
... We report a reliable and robust method for the fabrication of bioinspired superomniphobic surfaces with precise concave-cap-shaped micropillar arrays. This method includes silicon-based conventional microelectromechanical systems (MEMS) and polymer replication processes. We have elucidated two critical cases of fabrication rules for precise micromachining of a negative-shaped bioinspired silicon m ...
DOI:
10.1021/acsami.0c03986

3. A Systematic Method for Predictive In Silico Chemical Vapor Deposition

Author:
Danielsson, Örjan; Karlsson, Matts; Sukkaew, Pitsiri; Pedersen, Henrik; Ojamäe, Lars
Source:
Journal of physical chemistry 2020 v.124 no.14 pp. 7725-7736
ISSN:
1932-7455
Subject:
silicon; silicon carbide,   etc   ; computer simulation; models; physical chemistry; vapors;     Show all 6 Subjects
Abstract:
... A comprehensive systematic method for chemical vapor deposition modeling consisting of seven well-defined steps is presented. The method is general in the sense that it is not adapted to a certain type of chemistry or reactor configuration. The method is demonstrated using silicon carbide (SiC) as a model system, with accurate matching to measured data without tuning of the model. We investigate t ...
DOI:
10.1021/acs.jpcc.9b10874

4. Charge-neutral epitaxial graphene on 6H–SiC(0001) via FeSi intercalation

Author:
Luo, Xingyun; Liang, Guojun; Sun, Xiucai; Li, Yanlu; Yu, Fapeng; Wei, Lei; Cheng, Xiufeng; Sun, Li; Zhao, Xian
Source:
Carbon 2020 v.156 pp. 187-193
ISSN:
0008-6223
Subject:
silicon; silicon carbide,   etc   ; electron transfer; energy; graphene; iron; temperature;     Show all 7 Subjects
Abstract:
... Graphene grown epitaxially on SiC(0001) substrates always exhibits n-type doping due to the coupling interaction between the substrate and graphene. The electronic properties of epitaxial graphene are thus impaired relative to those of free-standing graphene, limiting its potential in device applications. In this work, by using first-principles calculations, we show that charge neutrality can be a ...
DOI:
10.1016/j.carbon.2019.09.061

5. Graphene-nanowalls/silicon hybrid heterojunction photodetectors

Author:
Wang, Huaichang; Fu, Yongqi
Source:
Carbon 2020 v.162 pp. 181-186
ISSN:
0008-6223
Subject:
silicon,   etc   ; detectors; graphene; processing technology;     Show all 4 Subjects
Abstract:
... We study and fabricate graphene nanowalls/silicon hybrid heterojunction photoconductive detector to provide process technology of the device and theoretical foundation for the purpose of preparation of high-performance photodetectors. The graphene nanowalls (GNWs) film is patterned by double-layered photoresist-based photolithography and reactive ion etching (RIE) process to achieve high quality G ...
DOI:
10.1016/j.carbon.2020.02.023

6. An ultraviolet photoelectron spectroscopy study on bandgap broadening of epitaxial graphene on SiC with surface doping

Author:
Hu, Yanfei; Liu, Jialin; Dou, Wentao; Mao, Kaili; Guo, Lixin; Chong, Laiyuan; Hu, Jichao; Yuan, Hao; He, Yanjing; Guo, Hui; Zhang, Yuming
Source:
Carbon 2020 v.157 pp. 340-349
ISSN:
0008-6223
Subject:
silicon carbide,   etc   ; electronics; graphene; spectroscopy;     Show all 4 Subjects
Abstract:
... The bandgap of epitaxial graphene thermally grown on 4H–SiC(0001) can be widened via a novel charge transfer mechanism by modifying the buffer layer and surface of SiC with substrate doping before epitaxial graphene growth. High-resolution photoemission spectroscopy base on synchrotron radiation reveal that the bandgap broadening of epitaxial graphene is attributed to modification of buffer layer ...
DOI:
10.1016/j.carbon.2019.10.043

7. Fabrication of a Nb-Doped β-Ga₂O₃ Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior

Author:
Chen, Jin-Xin; Li, Xiao-Xi; Tao, Jia-Jia; Cui, Hui-Yuan; Huang, Wei; Ji, Zhi-Gang; Sai, Qing-Lin; Xia, Chang-Tai; Lu, Hong-Liang; Zhang, David Wei
Source:
ACS applied materials & interfaces 2020 v.12 no.7 pp. 8437-8445
ISSN:
1944-8252
Subject:
silicon,   etc   ; crystals; silica; temperature; transistors;     Show all 5 Subjects
Abstract:
... For the first time, we report the successful fabrication of well-behaved field-effect transistors based on Nb-doped β-Ga₂O₃ nanobelts mechanically exfoliated from bulk single crystals. The exfoliated β-Ga₂O₃ nanobelts were transferred onto a purified surface of the 110 nm SiO₂/Si substrate. These Nb-doped devices showed excellent electrical performance such as an ultrasmall cutoff current of ∼10 f ...
DOI:
10.1021/acsami.9b20499

8. Fabrication of multi-crystalline silicon pyramid structure and improvement in its photovoltaic performance

Author:
Qiao, Fen; Liang, Qichao; Jiang, Yansen; Chu, Huaqiang; Chen, Zhenya; Jin, Dunyuan
Source:
Journal of materials science 2020 v.55 no.2 pp. 680-687
ISSN:
0022-2461
Subject:
silicon,   etc   ; corrosion; solar cells; texture;     Show all 4 Subjects
Abstract:
... The texture structure of the multi-crystalline silicon (mc-Si) pyramid was realized by a combination of acidic and alkaline etching. The results showed that the structure of the corrosion pits could be first obtained on the mc-Si surface by acid etching, and the subsequent alkaline etching could further transform the pits into a pyramid structure. The best solar cell obtained based on the textured ...
DOI:
10.1007/s10853-019-04072-9

9. Development of a Transferable ReaxFF Parameter Set for Carbon- and Silicon-Based Solid Systems

Author:
Wang, Yang; Shi, Yuqing; Sun, Qiang; Lu, Kang; Kubo, Momoji; Xu, Jingxiang
Source:
Journal of physical chemistry 2020 v.124 no.18 pp. 10007-10015
ISSN:
1932-7455
Subject:
silicon; silicon carbide; silicon nitride,   etc   ; algorithms; carbon; friction; hydrogen; lubricants; molecular dynamics; oxidation; oxygen;     Show all 11 Subjects
Abstract:
... The performance of carbon- and silicon-based solid lubricants is strongly affected by the tribochemical reactions, especially with hydrogen and oxygen. Even though understanding and unveiling these reaction dynamics are important to improve performance, these insights are difficult to be obtained by experiments. Molecular dynamics simulation using the reactive force field (ReaxFF) provides a way t ...
DOI:
10.1021/acs.jpcc.0c01645

10. Low-cost urchin-like silicon-based anode with superior conductivity for lithium storage applications

Author:
Guan, Peng; Zhang, Wei; Li, Chengyu; Han, Na; Wang, Xuechen; Li, Qiaofeng; Song, Guojun; Peng, Zhi; Li, Jianjiang; Zhang, Lei; Zhu, Xiaoyi
Source:
Journal of colloid and interface science 2020 v.575 pp. 150-157
ISSN:
0021-9797
Subject:
silicon,   etc   ; anodes; carbon nanotubes; lithium; microparticles; wastes;     Show all 6 Subjects
Abstract:
... Poor rate and cycling performance are the most critical drawbacks for Si-based anodes on account of their inferior conductivity and colossal volumetric expansion during lithiation/delithiation. Here we report the fabrication of structurally-integrated urchin-like Si anode, which provides prominent structural stability and distinguished electron and ion transmission pathways for lithium storage. Th ...
DOI:
10.1016/j.jcis.2020.04.082

11. Electron-beam introduction of heteroatomic Pt–Si structures in graphene

Author:
Dyck, Ondrej; Zhang, Cheng; Rack, Philip D.; Fowlkes, Jason D.; Sumpter, Bobby; Lupini, Andrew R.; Kalinin, Sergei V.; Jesse, Stephen
Source:
Carbon 2020 v.161 pp. 750-757
ISSN:
0008-6223
Subject:
silicon,   etc   ; chemical bonding; graphene; transmission electron microscopes;     Show all 4 Subjects
Abstract:
... Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In s ...
DOI:
10.1016/j.carbon.2020.01.042

12. Magneto-transport properties of B-, Si- and N-doped graphene

Author:
Shih, Po-Hsin; Do, Thi-Nga; Gumbs, Godfrey; Huang, Danhong; Pham, Thanh Phong; Lin, Ming-Fa
Source:
Carbon 2020 v.160 pp. 211-218
ISSN:
0008-6223
Subject:
silicon,   etc   ; boron; energy; graphene; metrology; models; nitrogen;     Show all 7 Subjects
Abstract:
... The effect due to doping by B, Si, N atoms on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by different types of dopant and doping concentrations. The effect of these guest atoms includes opening a band gap, thereby giving rise to r ...
DOI:
10.1016/j.carbon.2019.12.088

13. Vertically Oriented Topological Insulator Bi₂Se₃ Nanoplates on Silicon for Broadband Photodetection

Author:
Li, Mingze; Wang, Zhenhua; Gao, Xuan P. A.; Zhang, Zhidong
Source:
Journal of physical chemistry 2020 v.124 no.18 pp. 10135-10142
ISSN:
1932-7455
Subject:
silicon,   etc   ; copper; electric current; electronic equipment; selenides;     Show all 5 Subjects
Abstract:
... As an exotic state of quantum matter, topological insulators like Bi₂Se₃ have potential applications in low power electronic and optoelectronic devices. Bi₂Se₃ nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi₂Se₃ nanoplates oriented vertically on the p-type ...
DOI:
10.1021/acs.jpcc.0c01978

14. Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type-I Clathrate Ba₈Cu₆Si₄₀

Author:
Sun, Bing; Zhao, Jiaqiang; Li, Yingde; Cao, Lianzhen; Yang, Yang; Fan, Xinmin; Liu, Xia; Wang, Chunyan; Huang, Xiaodong; Wang, Xinle; Sun, Yongzhi; Ma, Hongan
Source:
Journal of physical chemistry 2020 v.124 no.16 pp. 9082-9088
ISSN:
1932-7455
Subject:
silicon,   etc   ; high pressure treatment; microstructure; thermal conductivity;     Show all 4 Subjects
Abstract:
... Si-based clathrate thermoelectric (TE) materials composed of low-cost, nontoxic, lightweight, and earth-abundant elements are typical representatives of cheaper thermoelectric materials. However, synthesis is difficult, and the relatively low ZT values are the barriers hindering the further development of the silicon clathrates. So, it is necessary to explore an alternative synthetic method and im ...
DOI:
10.1021/acs.jpcc.0c02045

15. Glycerol-crosslinked PEDOT:PSS as bifunctional binder for Si anodes: Improved interfacial compatibility and conductivity

Author:
Liu, Xuejiao; Zai, Jiantao; Iqbal, Asma; Chen, Ming; Ali, Nazakat; Qi, Rongrong; Qian, Xuefeng
Source:
Journal of colloid and interface science 2020 v.565 pp. 270-277
ISSN:
0021-9797
Subject:
silicon,   etc   ; anodes; crosslinking; glycerol; nanoparticles; polymers;     Show all 6 Subjects
Abstract:
... Developing conductive polymer binders is a new way to enhance the electric connectivity and mechanical contact of Si based anode material. While the linear structure of commercial PEDOT:PSS cannot effectively alleviate the volume expansion of Si. Herein, glycerol was introduced as a cross-linker to PEDOT:PSS binder for Si anodes, which can further improve the interfacial compatibility between sili ...
DOI:
10.1016/j.jcis.2020.01.028

16. Shape and Orientation Controlled Hydrothermal Synthesis of Silicide and Metal Dichalcogenide on a Silicon Substrate

Author:
Ahmed, Sohail; Ding, Xiang; Chu, Xueze; Li, Mengyao; Chu, Dewei; Ma, Tianyi; Wu, Tom; Vinu, Ajayan; Yi, Jiabao
Source:
ACS applied materials & interfaces 2020 v.12 no.16 pp. 18850-18858
ISSN:
1944-8252
Subject:
silicon,   etc   ; electronic equipment; molybdenum; molybdenum disulfide; thermodynamics;     Show all 5 Subjects
Abstract:
... Shape-controlled MoS₂ has been grown directly on a silicon substrate, for the first time, with the use of a facile hydrothermal synthesis approach. The growth morphology is dependent on the substrate orientation. Square, hexagonal, and triangular patterns of MoS₂ are grown on Si(100), Si(110), and Si(111), respectively. Detailed studies reveal that Mo silicide is formed at the initial stage, and t ...
DOI:
10.1021/acsami.0c01222

17. Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi₂Te₃ via Spin Injection

Author:
Yu, Jinling; Xia, Lijia; Zhu, Kejing; Pan, Qinggao; Zeng, Xiaolin; Chen, Yonghai; Liu, Yu; Yin, Chunming; Cheng, Shuying; Lai, Yunfeng; He, Ke; Xue, Qikun
Source:
ACS applied materials & interfaces 2020 v.12 no.15 pp. 18091-18100
ISSN:
1944-8252
Subject:
silicon,   etc   ; absorbance; electric current; polarized light; temperature;     Show all 5 Subjects
Abstract:
... The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead to novel opto-spintronic devices. The CPGE of three-dimensional topological insulator Bi₂Te₃ with different substrates and thicknesses has been systematically investigated. It is found that the CPGE current can be dramatically tuned by adopting different s ...
DOI:
10.1021/acsami.9b23389

18. Progress in silicon microwire solar cells

Author:
Um, Han-Don; Lee, Kangmin; Hwang, Inchan; Park, Jeonghwan; Choi, Deokjae; Kim, Namwoo; Kim, Hyungwoo; Seo, Kwanyong
Source:
Journal of materials chemistry A 2020 v.8 no.11 pp. 5395-5420
ISSN:
2050-7496
Subject:
silicon,   etc   ; coatings; electrodes; optical properties; solar cells;     Show all 5 Subjects
Abstract:
... Silicon microwires are very promising candidates for next-generation solar cells. Si microwires achieve strong broadband light absorption, acting as an antireflection coating layer. In addition to superior optical properties, Si microwires can effectively separate and collect photocarriers at the radial junction owing to a short diffusion length (equal to the microwire radius). This factor can rel ...
DOI:
10.1039/c9ta12792e

19. Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

Author:
Xu, Kaimin; Xiao, Xiongbin; Zhou, Wenjia; Jiang, Xianyuan; Wei, Qi; Chen, Hao; Deng, Zhuo; Huang, Jian; Chen, Baile; Ning, Zhijun
Source:
ACS applied materials & interfaces 2020 v.12 no.13 pp. 15414-15421
ISSN:
1944-8252
Subject:
silicon,   etc   ; energy; infrared radiation; quantum dots;     Show all 4 Subjects
Abstract:
... Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existin ...
DOI:
10.1021/acsami.0c01744

20. Dissolution and mineralization behavior of metallic impurity content in diamond wire saw silicon powder during acid leaching

Author:
Yang, Shicong; Wan, Xiaohan; Wei, Kuixian; Ma, Wenhui; Wang, Zhi
Source:
Journal of cleaner production 2020 v.248 pp. 119256
ISSN:
0959-6526
Subject:
silicon,   etc   ; corrosion; hydrochloric acid; leaching; mineralization; silica;     Show all 6 Subjects
Abstract:
... Metallic impurity removal is essential for the recovery and purification of silicon from diamond wire saw silicon powder during acid leaching process. However, the related dissolution and mineralization behavior are unclear, which are the two main factors governing the capacity of metallic impurity removal during the acid leaching process for silicon recovery from diamond wire saw silicon powder. ...
DOI:
10.1016/j.jclepro.2019.119256