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Using colloid lithography to fabricate silicon nanopillar arrays on silicon substrates

Author:
Chen, Jem-Kun, Qui, Jia-Qi, Fan, Shih-Kang, Kuo, Shiao-Wei, Ko, Fu-Hsiang, Chu, Chih-Wei, Chang, Feng-Chih
Source:
Journal of colloid and interface science 2012 v.367 no.1 pp. 40-48
ISSN:
0021-9797
Subject:
contact angle, hydrophilicity, nanogold, oxygen, silicon
Abstract:
In this study, we partially grafted geminal silanol groups in the protecting organic shells on the surfaces of gold nanoparticles (AuNPs) and then assembled the alkyl-AuNP-Si(OH)₄ particles onto the surfaces of silicon (Si) wafers. The density of assembled AuNPs on the Si surface was adjusted by varying the geminal silanol group content on the AuNP surface; at its optimal content, it approached the high assembly density (0.0254particles/nm²) of an AuNP assembled monolayer. Using reactive-ion etching (RIE) with the templates as masks, we transferred the patterned AuNP assemblies to form large-area, size-tunable, Si nanopillar arrays, the assembly density of which was controlled by the dimensions of the AuNPs. Using this colloidal lithography (CL) process, we could generate Si nanopillars having sub-10-nm diameters and high aspect ratios. The water contact angles of the high-aspect-ratio Si nanopillars approached 150°. We used another fabrication process, involving electron beam lithography and oxygen plasma treatment, to generate hydrophilic 200-nm-resolution line patterns on a Si surface to assemble the AuNPs into 200-nm-resolution dense lines for use as an etching mask. Subsequent CL provided a patterned Si nanopillar array having a feature size of 200nm on the Si surface. Using this approach, it was possible to pattern sub-10-nm Si nanopillar arrays having densities as high as 0.0232nm⁻².
Agid:
1007858