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Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Yu, Xinge, Smith, Jeremy, Zhou, Nanjia, Zeng, Li, Guo, Peijun, Xia, Yu, Alvarez, Ana, Aghion, Stefano, Lin, Hui, Yu, Junsheng, Chang, Robert P. H., Bedzyk, Michael J., Ferragut, Rafael, Marks, Tobin J., Facchetti, Antonio
Proceedings of the National Academy of Sciences of the United States of America 2015 v.112 no.11 pp. 3217-3222
electronics, porosity, semiconductors, temperature
Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.