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Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Author:
Yu, Xinge, Smith, Jeremy, Zhou, Nanjia, Zeng, Li, Guo, Peijun, Xia, Yu, Alvarez, Ana, Aghion, Stefano, Lin, Hui, Yu, Junsheng, Chang, Robert P. H., Bedzyk, Michael J., Ferragut, Rafael, Marks, Tobin J., Facchetti, Antonio
Source:
Proceedings of the National Academy of Sciences of the United States of America 2015 v.112 no.11 pp. 3217-3222
ISSN:
0027-8424
Subject:
electronics, porosity, semiconductors, temperature
Abstract:
Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.
Agid:
2303509