Jump to Main Content
Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells
- Devulder, Wouter, Opsomer, Karl, Seidel, Felix, Belmonte, Attilio, Muller, Robert, De Schutter, Bob, Bender, Hugo, Vandervorst, Wilfried, Van Elshocht, Sven, Jurczak, Malgorzata, Goux, Ludovic, Detavernier, Christophe
- ACS Applied Materials & Interfaces 2013 v.5 no.15 pp. 6984-6989
- annealing, carbon, computer hardware, lymphocytes, phase transition, thermal stability
- We report the improved thermal stability of carbon alloyed Cu₀.₆Te₀.₄ for resistive memory applications. Copper–tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu₀.₆Te₀.₄-C/Al₂O₃/Si resistive memory cell, and compared to pure Cu₀.₆Te₀.₄. Very attractive endurance (up to 1 × 10³ cycles) and retention properties (up to 1 × 10⁴ s at 85 °C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices.