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Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

Devulder, Wouter, Opsomer, Karl, Seidel, Felix, Belmonte, Attilio, Muller, Robert, De Schutter, Bob, Bender, Hugo, Vandervorst, Wilfried, Van Elshocht, Sven, Jurczak, Malgorzata, Goux, Ludovic, Detavernier, Christophe
ACS Applied Materials & Interfaces 2013 v.5 no.15 pp. 6984-6989
annealing, carbon, computer hardware, lymphocytes, phase transition, thermal stability
We report the improved thermal stability of carbon alloyed Cu₀.₆Te₀.₄ for resistive memory applications. Copper–tellurium-based memory cells show enhanced switching behavior, but the complex sequence of phase transformations upon annealing is disadvantageous for integration in a device. We show that addition of about 40 at % carbon to the Cu-telluride layer results in an amorphous material up to 360 °C. This material was then integrated in a TiN/Cu₀.₆Te₀.₄-C/Al₂O₃/Si resistive memory cell, and compared to pure Cu₀.₆Te₀.₄. Very attractive endurance (up to 1 × 10³ cycles) and retention properties (up to 1 × 10⁴ s at 85 °C) are observed. The enhanced thermal stability and good switching behavior make this material a promising candidate for integration in memory devices.