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Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics
- Xu, Wangying, Cao, Hongtao, Liang, Lingyan, Xu, Jian-Bin
- ACS Applied Materials & Interfaces 2015 v.7 no.27 pp. 14720-14725
- air, annealing, electric power, electronics, gallium, hysteresis, indium, temperature
- We reported a novel aqueous route to fabricate Ga₂O₃ dielectric at low temperature. The formation and properties of Ga₂O₃ were investigated by a wide range of characterization techniques, revealing that Ga₂O₃ films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In₂O₃/Ga₂O₃ TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm² V–¹ s–¹, on/off current ratio of ∼10⁵, low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.