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Application of Organophosphonic Acids by One-Step Supercritical CO2 on 1D and 2D Semiconductors: Toward Enhanced Electrical and Sensing Performances
- Bhartia, Bhavesh, Bacher, Nadav, Jayaraman, Sundaramurthy, Khatib, Salam, Song, Jing, Guo, Shifeng, Troadec, Cedric, Puniredd, Sreenivasa Reddy, Srinivasan, Madapusi Palavedu, Haick, Hossam
- ACS Applied Materials & Interfaces 2015 v.7 no.27 pp. 14885-14895
- acids, carbon dioxide, electronics, nanowires, photovoltaic cells, semiconductors, silicon
- Formation of dense monolayers with proven atmospheric stability using simple fabrication conditions remains a major challenge for potential applications such as (bio)sensors, solar cells, surfaces for growth of biological cells, and molecular, organic, and plastic electronics. Here, we demonstrate a single-step modification of organophosphonic acids (OPA) on 1D and 2D structures using supercritical carbon dioxide (SCCO₂) as a processing medium, with high stability and significantly shorter processing times than those obtained by the conventional physisorption-chemisorption method (2.5 h vs 48–60 h).The advantages of this approach in terms of stability and atmospheric resistivity are demonstrated on various 2D materials, such as indium–tin-oxide (ITO) and 2D Si surfaces. The advantage of the reported approach on electronic and sensing devices is demonstrated by Si nanowire field effect transistors (SiNW FETs), which have shown a few orders of magnitude higher electrical and sensing performances, compared with devices obtained by conventional approaches. The compatibility of the reported approach with various materials and its simple implementation with a single reactor makes it easily scalable for various applications.