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Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template

Author:
Dudem, Bhaskar, Ko, Yeong Hwan, Leem, Jung Woo, Lee, Soo Hyun, Yu, Jae Su
Source:
ACS Applied Materials & Interfaces 2015 v.7 no.37 pp. 20520-20529
ISSN:
1944-8252
Subject:
aluminum, aluminum oxide, coatings, contact angle, cost effectiveness, electrochemistry, electrodes, gold, hydrophobicity, indium tin oxide, nanopores, oxidation, polydimethylsiloxane, polyethylene terephthalates, transmittance, wavelengths
Abstract:
Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the subwavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430–455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (θCA) of ∼115°, which can be useful for self-cleaning applications. The average transmittance (Tₐᵥg) of the entire TENG device was observed to be ∼70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (VOC) and short-circuit current (ISC) values of ∼3.8 V and ∼0.8 μA were obtained instantaneously, respectively, which were higher than those (i.e., VOC ≈ 2.2 V, and ISC ≈ 0.4 μA) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed.
Agid:
5284236