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Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2-b][1]benzothiophene Semiconductor Layer

Author:
Amin, Atefeh Y., Khassanov, Artoem, Reuter, Knud, Meyer-Friedrichsen, Timo, Halik, Marcus
Source:
Journal of the American Chemical Society 2012 v.134 no.40 pp. 16548-16550
ISSN:
1520-5126
Subject:
X-radiation, air, semiconductors
Abstract:
An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C₁₃-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm²/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.
Agid:
5386878