Jump to Main Content
Low-Voltage Organic Field Effect Transistors with a 2-Tridecylbenzothieno[3,2-b]benzothiophene Semiconductor Layer
- Amin, Atefeh
Y., Khassanov, Artoem, Reuter, Knud, Meyer-Friedrichsen, Timo, Halik, Marcus
- Journal of the American Chemical Society 2012 v.134 no.40 pp. 16548-16550
- X-radiation, air, semiconductors
- An asymmetric n-alkyl substitution pattern was realized in 2-tridecylbenzothieno[3,2-b]benzothiophene (C₁₃-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm²/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.