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Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films

Author:
Li, Yuanzheng, Li, Xinshu, Chen, Heyu, Shi, Jia, Shang, Qiuyu, Zhang, Shuai, Qiu, Xiaohui, Liu, Zheng, Zhang, Qing, Xu, Haiyang, Liu, Weizhen, Liu, Xinfeng, Liu, Yichun
Source:
ACS applied materials & interfaces 2017 v.9 no.33 pp. 27402-27408
ISSN:
1944-8252
Subject:
aluminum oxide, electrical properties, models, nanospheres, oxygen, photoluminescence, semiconductors
Abstract:
MoS₂ as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS₂ via atomic-layer-deposited Al₂O₃ films. The deposited Al₂O₃ films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS₂ that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS₂ with different thickness of Al₂O₃, the doped carrier concentration is estimated at ∼2.7 × 10¹³ cm–² based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS₂ as the thicknesses of Al₂O₃ capping layer increase. Effective control of gas molecules doping in monolayer MoS₂ provides us a valuable insight into the applications of MoS₂ based optical and electrical devices.
Agid:
5795683