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Wet chemical etching of ZnO films using NH x -based (NH4)2CO3 and NH4OH alkaline solution
- Kim, Jae-Kwan, Lee, Ji-Myon
- Journal of materials science 2017 v.52 no.22 pp. 13054-13063
- ambient temperature, ammonium carbonate, ammonium hydroxide, hydrochloric acid, zinc oxide
- In this paper, we deposited ZnO thin films by RF magnetron sputtering at room temperature from un-doped targets. Wet chemical etching of ZnO films in (NH₄)₂CO₃ and NH₄OH solutions were examined. For comparison, hydrochloric acid was also used as an etchant. The NH ₓ -based alkaline solutions provide well-controlled etching rate, and smooth surface and sidewall profiles. Although NH ₓ -based alkaline solution etch rates for ZnO were relatively low, they were enhanced with the use of a H₃O stabilizer. In this case, the NH₄OH solution went from reaction-dominant mode to diffusion-dominant mode, which is beneficial for smooth surface morphology.