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Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy
- Dadlani, Anup, Acharya, Shinjita, Trejo, Orlando, Nordlund, Dennis, Peron, Mirco, Razavi, Javad, Berto, Filippo, Prinz, Fritz B., Torgersen, Jan
- ACS applied materials & interfaces 2017 v.9 no.45 pp. 39105-39109
- X-ray absorption spectroscopy, energy, zinc, zinc sulfate
- Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2–3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. A lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO₄ forms at substrate interfaces, which may be detrimental for device performance.