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One-step synthesis of graphene quantum dots from defective CVD graphene and their application in IGZO UV thin film phototransistor

Zhu, Huihui, Liu, Ao, Shan, Fukai, Yang, Wenrong, Zhang, Wenling, Li, Da, Liu, Jingquan
Carbon 2016 v.100 pp. 201-207
absorption, cost effectiveness, electric current, films (materials), gallium, graphene, indium, luminescence, methodology, optical properties, quantum dots, shredding, solvents, sonication, zinc oxide
Chemical vapor deposition (CVD) has recently been considered as the most reliable method to prepare high-quality monolayer graphene films, yet the as-grown graphene usually contains wrinkles and cracks or suffers from discontinuity. These defects can easily result in the shredding of large-sized graphene into small pieces even under a gentle disturbance. Herein, this work presents a cost-effective new method to produce high-quality GQDs by vigorous sonication of defective CVD graphene. The prepared GQDs can be easily and stably dispersed in organic solvents. Morphology and optical properties of the GQDs are investigated using a number of techniques. And we observed the as-prepared GQDs are highly homogeneous, mostly consisted of single-layered graphene, roughly round shapes less than 8 nm in a diameter, and exhibited a strong blue luminescence. Impressively, it is also confirmed that the as-obtained GQDs can act as a promising light absorption material for phototransistor with a hybrid film of GQDs and indium gallium zinc oxide (IGZO) as the channel layer. The GQD/IGZO phototransistor exhibited an appreciated photocurrent, which is 10 times larger than that of the IGZO one when exposed to 270 nm light.