Jump to Main Content
Effect of interface defects on the magnetoresistance in Bi4Ti3O12/(La, Sr)Mn1−xO3 heterostructures
- Huang, Haoliang, Zhai, Xiaofang, Wang, Jianlin, Meng, Dechao, Yun, Yu, Ma, Chao, Zheng, Xusheng, Wu, Lihui, Pan, Haibin, Fu, Zhengping, Lu, Yalin
- Journal of materials science 2018 v.53 no.13 pp. 9627-9634
- chemical structure, lanthanum, oxides, strontium, transmission electron microscopy
- Heterostructure between layered ferroelectric oxide Bi₄Ti₃O₁₂ and perovskite (La, Sr)Mn₁₋ₓO₃ is highly interesting due to the need to explore new types of functional heterostructures. However, fabricating such heterostructures with high quality is challenging because of the non-isostructural crystalline symmetry of the two constituents. In this work, we constructed two different heterostructures, in which the Bi₄Ti₃O₁₂ layers with precisely controlled thicknesses were deposited on insulating La₀.₇Sr₀.₃Mn₀.₈₁O₃ and conducting La₀.₇Sr₀.₃MnO₃ bottom layers, respectively. Results of cross section transmission electron microscopy identified rough interfaces between insulating (La, Sr)Mn₁₋ₓO₃ and Bi₄Ti₃O₁₂, while sharp interfaces between metallic (La, Sr)Mn₁₋ₓO₃ and Bi₄Ti₃O₁₂. In the former, levels of intermixing and charge leaking are strongly dependent on the thickness of the Bi₄Ti₃O₁₂ capping layer, which induces a capping-layer-thickness-dependent magnetoresistance. These results demonstrated that the interfacial defect is a critical factor for designing functional heterostructures composed of layered oxide and perovskite oxide.