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Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1−xBixO3 thin films

Sharma, Himanshu, Kumar, Deepak, Tulapurkar, Ashwin, Tomy, C. V.
Journal of materials science 2019 v.54 no.1 pp. 130-138
anisotropy, bismuth, crystal structure, electrons, ions, magnetic properties, magnetism, manganese, temperature
The magnetic properties of manganites are extremely sensitive to the doping-induced structural (e.g., crystal structure, site occupancy and chemical ordering) modulations. Here, we report the effect of B-site bismuth doping on the magnetic and transport properties in La₀.₅Ca₀.₅Mn₁₋ₓBiₓO₃ (LCMBO) thin films (for x = 0, 0.02 and 0.05) for high-efficiency spintronics devices. For thin film of LCMBO (with x = 0.02), a significant increase in the magnetization and ferromagnetic ordering temperature (TC) is observed. Also, about 98% magnetoresistance (MR) and unusually large (~ 42%) anisotropic magnetoresistance (AMR) are observed at 50 K in the same LCMBO (for x = 0.02) thin film. This observed improvement in TC, MR and AMR in LCMBO (with x = 0.02) thin film may be attributed to the modulation of the trapped electrons through JT distortions due to the replacement of Mn³⁺ ions by larger Bi³⁺ ions. With a further increase in bismuth doping (for x = 0.05) at the B-site, a significant decrease in magnetization and TC has been observed.