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Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)
- Xin, Ying, Zhao, Xiaofeng, Jiang, Xiankai, Yang, Qun, Huang, Jiahe, Wang, Shuhong, Zheng, Rongrong, Wang, Cheng, Hou, Yanjun
- RSC advances 2018 v.8 no.13 pp. 6878-6886
- nuclear magnetic resonance spectroscopy, electrical properties, chemical reactions, computer hardware, carbon, Fourier transform infrared spectroscopy, hydrogen
- Poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized under a Suzuki coupling reaction, and its structure was proved by Fourier transform infrared (FT-IR) spectroscopy, and hydrogen and carbon nuclear magnetic resonance (¹H-NMR and ¹³C-NMR). A nonvolatile organic memristor, based on active layers of PFO and PFO:GO composite, was prepared by spin-coating and the influence of GO concentration on the electrical characteristics of the memristor was investigated. The results showed that the device had two kinds of conductance behavior: electric bistable nonvolatile flash memory behavior and conductor behavior. With an increase in GO concentration, the device has an increased ON/OFF current ratio, increasing from 2.1 × 10¹ to 1.9 × 10³, a lower threshold voltage (VSET), decreasing from −1.1 V to −0.7 V, and better stability. The current remained stable for 3 hours in both the ON state and OFF state, and the ON and OFF state current of the device did not change substantially after 9000 read cycles.