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Enhancing oxidation rate of 4H–SiC by oxygen ion implantation
- Liu, Min, Zhang, Shuyuan, Yang, Xiang, Chen, Xue, Fan, Zhongchao, Wang, Xiaodong, Yang, Fuhua, Ma, Chao, He, Zhi
- Journal of materials science 2019 v.54 no.2 pp. 1147-1152
- electric field, oxidation, oxygen, silica, silicon carbide
- In this study, the thermal oxidation rate of oxygen ion (O⁺) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field (Ebᵣₑₐₖdₒwₙ) and capacitance–voltage (CV) curve of the grown oxide (SiO₂) film were also evaluated. It is found that the thermal SiO₂ growth rate on 4H–SiC (0001) face was significantly improved by O⁺ implantation. Ebᵣₑₐₖdₒwₙ test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO₂ contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO₂ film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.