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Chemical pressure in the correlated narrow-gap semiconductor FeGa3

Author:
Verchenko, Valeriy Yu., Zubtsovskii, Alexander O., Tsirlin, Alexander A., Shevelkov, Andrei V.
Source:
Journal of materials science 2019 v.54 no.3 pp. 2371-2378
ISSN:
0022-2461
Subject:
aluminum, crystallization, electrical resistance, heat, semiconductors
Abstract:
In the correlated narrow-gap semiconductor FeGa₃, 1.25 Ga atoms per formula unit can be replaced by Al atoms providing chemical pressure of ~ 1.2 GPa. The resulting FeGa₃₋yAly solid solution (0 ≤ y ≤ 1.25) crystallizes in the parent structure type with Al atoms preferentially occupying one of the two crystallographic positions of Ga. As revealed by electrical resistivity and heat capacity measurements, FeGa₃₋yAly exhibits nonmetallic properties for y = 0.937(9) similar to the parent compound FeGa₃ demonstrating that the electronic structure is not significantly altered by the chemical pressure. This result is corroborated by the electronic structure calculations, which show that the band gap is only slightly reduced in FeGa₃₋yAly for y = 1.
Agid:
6207251