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Surface properties of electrodeposited a-Si:C:H:F thin films by X-ray photoelectron spectroscopy
- Ram, P, Singh, J, Ramamohan, T. R, Venkatachalam, S, Sundarsingh, V. P
- Journal of materials science 1997 v.32 no.23 pp. 6305-6310
- X-ray photoelectron spectroscopy, carbon, ethylene glycol, fluorine, hydrogen, infrared spectroscopy, oxygen, scanning electron microscopy, silicon, silicon carbide
- Surface properties of amorphous silicon thin films containing hydrogen, flourine and carbon obtained from hydrofluosilicic acid and ethylene glycol using the electrodeposition method are reported as a function of current density and deposition time. The Si2p core level X-ray photoelectron spectra exhibited binding-energy shifts corresponding to SiFx (x=1–4), SiC, Si-H and Si-O2 type bond formations. The shifts in 1s spectra of fluorine, carbon and oxygen confirmed the presence of fluorine, carbon and oxygen in bonded form. Theoretical binding-energy shifts calculated from Pauling's electronegativity values were in close agreement with the measured values. The relative concentration values of C/Si estimated in these films were found to be larger than those of F/Si and O/Si. The results were corroborated with infrared spectroscopy and scanning electron microscopy data.