U.S. flag

An official website of the United States government

PubAg

Main content area

Silicon priming benefits germination, ion balance, and root structure in salt-stressed durum wheat (Triticum durum desf.)

Author:
Bijanzadeh, Ehsan, Egan, Todd P.
Source:
Journal of plant nutrition 2018 v.41 no.20 pp. 2560-2571
ISSN:
1532-4087
Subject:
Triticum turgidum subsp. durum, cultivars, durum wheat, germination, potassium, salinity, salt stress, seeds, silicon, sodium, sodium chloride, soil treatment
Abstract:
Effects of silicon (Si) priming at 0, 0.5, 1.0, and 1.5 mM on germination, ion balance, and root structure of two durum wheat cultivars at 0, 100, and 200 mM sodium chloride (NaCl) was conducted in a laboratory. An aliquot of 200 mM NaCl with 1.5 mM Si improved Behrang cultivar germination from 54 to 88%, but in Yavaros only from 49 to 85%. In Behrang, the control root length at 200 mM NaCl increased from 5.07 to 7.11 mm when treated with 1.5 mM Si, but Yavaros only increased from 3.18 to 4.09 mm. Behrang accumulated less sodium (Na⁺) and more potassium (K⁺). For mean diameter of central and peripheral metaxylem cells, Behrang benefitted more from Si amelioration than Yavaros. Salinity affected the diameter of central and peripheral metaxylem cells to a greater degree compared to vessel number. Si soil application (1.0 and 1.5 mM Si) may help to establish durum wheat seeds grown under saline conditions.
Agid:
6296039