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Pressure-induced metallization in MoSe₂ under different pressure conditions

Author:
Yang, Linfei, Dai, Lidong, Li, Heping, Hu, Haiying, Liu, Kaixiang, Pu, Chang, Hong, Meiling, Liu, Pengfei
Source:
RSC advances 2019 v.9 no.10 pp. 5794-5803
ISSN:
2046-2069
Subject:
Raman spectroscopy, atomic force microscopy, electrical conductivity, molybdenum, phase transition, shear stress, transmission electron microscopy, van der Waals forces
Abstract:
In this study, the vibrational and electrical transport properties of molybdenum diselenide were investigated under both non-hydrostatic and hydrostatic conditions up to ∼40.2 GPa using the diamond anvil cell in conjunction with Raman spectroscopy, electrical conductivity, high-resolution transmission electron microscopy, atomic force microscopy, and first-principles theoretical calculations. The results obtained indicated that the semiconductor-to-metal electronic phase transition of MoSe₂ can be extrapolated by some characteristic parameters including abrupt changes in the full width at half maximum of Raman modes, electrical conductivity and calculated bandgap. Under the non-hydrostatic condition, metallization occurred at ∼26.1 GPa and it was irreversible. However, reversible metallization occurred at ∼29.4 GPa under the hydrostatic condition. In addition, the pressure-induced metallization reversibility of MoSe₂ can be revealed by high-resolution transmission electron and atomic force microscopy of the recovered samples under different hydrostatic conditions. This discrepancy in the metallization phenomenon of MoSe₂ in different hydrostatic environments was attributed to the mitigated interlayer van der Waals coupling and shear stress caused by the insertion of pressure medium into the layers.
Agid:
6313794