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Efficient light trapping of quasi-inverted nanopyramids in ultrathin c-Si through a cost-effective wet chemical method

Tang, Quntao, Shen, Honglie, Gao, Kai, Yao, Hanyu, Jiang, Ye, Zheng, Chaofan, Pu, Tian, Li, Yufang, Liu, Youwen, Zhang, Lei
RSC advances 2016 v.6 no.99 pp. 96686-96692
cost effectiveness, nanosilver, silver, simulation models, solar cells, surface area
In this paper, we report quasi-inverted nanopyramids (QIP) for light-trapping in ultrathin c-Si by a cost-effective wet chemical method. The QIP is fabricated by a well-known two-step Ag assisted chemical etching method followed by a post nanostructure rebuilding (NSR) process, lowering the surface area to ∼3.0 times for suppressing surface recombination losses. The comparable average absorptance value of 43 μm c-Si with double-sided QIP to that of 182 μm c-Si with double-sided conventional pyramid in the spectral range of 300–1100 nm demonstrates an over 4.2-fold reduction in material usage. Finally, a simulation model is proposed to explain the superiority of our QIP compared with the periodic inverted pyramid (IP) structure of the same size, presenting a promising method to the mass production of high-efficiency ultrathin c-Si HIT solar cells.