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Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D., Feygelson, Tatyana I., Tadjer, Marko J., Pate, Bradford B., Foley, Brian M., Yates, Luke, Pantelides, Sokrates T., Cola, Baratunde A., Goorsky, Mark, Graham, Samuel
ACS applied materials & interfaces 2019 v.11 no.20 pp. 18517-18527
electronic equipment, electronics, heat flow, heat transfer, molecular dynamics, silicon, simulation models, temperature, thermal conductivity, thermal energy
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational temperature demands. The heat flow in these systems is significantly influenced or even dominated by thermal boundary resistance at the interface between dissimilar materials. However, controlling and tuning heat transport across an interface and in the adjacent materials has so far drawn limited attention. In this work, we grow chemical vapor-deposited diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond–silicon interfaces. We observed the highest diamond–silicon thermal boundary conductance (TBC) measured to date and increased diamond thermal conductivity due to strong grain texturing in the diamond near the interface. Additionally, nonequilibrium molecular dynamics simulations and a Landauer approach are used to understand the diamond–silicon TBC. These findings pave the way for tuning or increasing thermal conductance in heterogeneously integrated electronics that involve polycrystalline materials and will impact applications including electronics thermal management and diamond growth.